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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD952 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) *DC Current Gain: hFE= 40(Min)@ IC= -500mA *Complement to Type BD951 APPLICATIONS *Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE -80 -80 -5 -5 -8 40 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.12 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage CONDITIONS IC= -1mA ; IB= 0 IC= -1mA ; IE= 0 IE= -1mA ; IC= 0 IC= -2A; IB= -0.2A B BD952 MIN -80 -80 -5 TYP. MAX UNIT V V V -1.0 -1.4 -50 -1.0 -0.1 -0.2 40 20 3 V V A mA mA mA IC= -2A; VCE= -4V VCB= -80V; IE= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0,TJ=150 ICEO IEBO hFE-1 hFE-2 fT Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product VCE= -40V; IB= 0 B VEB= -5V; IC= 0 IC= -500mA ; VCE= -4V IC= -2A ; VCE= -4V IC= -500mA ; VCE= -4V MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.1 0.4 s s IC= -1.0A; IB1= -IB2= -0.1A; VCC= -20V; RL= 20 isc Websitewww.iscsemi.cn 2 |
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